dmn3050s document number: ds31503 rev. 3 - 2 1 of 4 www.diodes.com november 2008 ? diodes incorporated dmn3050s new product n-channel enhancement mode mosfet features ? low on-resistance: 35m ? @ v gs = 10v 50m ? @ v gs = 4.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q 101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 20 v drain current (note 1) t a = 25c t a = 70c i d 5.2 4.2 a drain current (note 1) pulsed i dm 20 a body-diode continuous current (note 1) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient @t a = 25c (note 1) r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 30v, v gs = 0v gate-body leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 1 1.5 3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? 27 40 35 50 m v gs = 10v, i d = 5.2a v gs = 4.5v, i d = 4.2a forward transconductance g fs ? 6.5 ? s v ds = 5v, i d = 5.2a source-drain diode forward voltage v sd ? 0.7 1 v v gs = 0v, i s = 1.0a dynamic characteristics input capacitance c iss ? 390 ? pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 55 ? pf reverse transfer capacitance c rss ? 45 ? pf notes: 1. device mounted on fr-4 pcb. t 5 sec. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 4. short duration pulse test used to minimize self-heating effect. sot-23 top view equivalent circuit source gate drai n d g s top view
dmn3050s document number: ds31503 rev. 3 - 2 2 of 4 www.diodes.com november 2008 ? diodes incorporated dmn3050s new product 0 4 8 12 16 20 fig. 1 typical output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 10v gs v = 3.0v gs 0 2 4 6 8 10 12 14 16 18 20 1 1.5 2 2.5 3 3.5 4 4.5 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ai n c u r r e n t (a) d v = 5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0 0.01 0.02 0.03 0.04 0.05 0.06 02 4 6 8101214161820 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 10v gs 0.02 0.03 0.04 0.05 0.06 0.07 02 4 6 81012 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v = 10v i = 10a gs d v = 4.5v i = 5a gs d 10 100 1,000 0 5 10 15 20 25 30 fig. 6 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz v = 0v gs c iss c oss c rss
dmn3050s document number: ds31503 rev. 3 - 2 3 of 4 www.diodes.com november 2008 ? diodes incorporated dmn3050s new product 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) fig. 7 gate threshold variation vs. ambient temperature -50-25 0 25 50 75100125150 t , ambient temperature (c) a i = 250a d i = 1ma d 0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i, s o u r c e c u r r en t (a) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 fig. 9 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 176c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 ordering information (note 5) part number case packaging DMN3050S-7 sot-23 3000/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d 3n2 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) 3n2 ym
dmn3050s document number: ds31503 rev. 3 - 2 4 of 4 www.diodes.com november 2008 ? diodes incorporated dmn3050s new product package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z a m j l d f b c h k g k1
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